Silicium Wafers
MATERIAL CHARACTERISTICS
| Growth Method | CZ |
| Conductivity Type | P / N |
| Dopant | Boron / Ph |
| Crystal Axis and Off Orientation Angle | (111) 4.0±0.5° nearest (110) |
| Oxygen Content | 14.5~16.5 ×10(17) |
| Carbon Content | ≤0.2 ×10(17) |
| Dislocation Density | ≤100 cm² |
| OSF | ≤50 cm² |
| BMD Density | ≥1.0×10(15) |
ELECTRICAL CHARACTERISTICS
| Resistivity | 2.00~4.00 Ohmcm |
| RRV | ≤10% |
DIMENSIONAL CHARACTERISTICS
| Diameter | 150.00±0.2 mm / 100.00±0.2 mm |
| Thickness | 625.0±15 μm / 500.0±25 μm |
| TTV | 5.00 μm |
| LTV | 1.5 μm |
| Warp | 30.00 μm |
| Particle | ≤10 pcs/W / ≥0.30 |
| Orientation Flat | (1-10)±1.0° |
| Orientation Flat Length | 47.5±2.5 mm |
BACK SURFACE
| Back Surface | Etching+BSD |